Self-Aligned Megahertz Organic Transistors Solution-Processed On Plastic

Stuart G. Higgins, Beinn V. O. Muir, Jessica Wade, Jiaren Chen, Bernd Striedinger, Herbert Gold, Barbara Stadlober, Mario Caironi, Ji-Seon Kim, Joachim H. G. Steinke, Alasdair J. Campbell

Adv. Electron. Mater. 1 (2015) 1500024, doi: 10.1002/aelm.201500024

© 2015 CC-BY Higgins et al.

© 2015 CC-BY Higgins et al.

'The processing of complex nanoscale electronic structures on plastic substrates is a significant challenge, requiring the combination of low temperature, nonaggressive, and high resolution methods. Here a scalable process flow on plastic is presented that enables the fabrication of flexible nano­imprinted organic field-effect transistors (OFETs) with self-aligned contacts and solution-processed semiconductor and dielectric layers, at processing temperatures ≤ 150 °C. OFETs are fabricated with device cutoff frequencies f > 1 MHz at low operating bias VDS = −15 V. The technique allows the patterning of metal structures over four orders of magnitude from 375 nm to 1 mm without the need for a rigid carrier, and provides a fabrication pathway to high performance nanostructured organic circuitry.'

 

The figure and abstract on this page is reprinted from this article and under this public license.