Indacenodithiophene-Benzothiadiazole Organic Field-Effect Transistors With Gravure Printed Semiconductor And Dielectric On Plastic

Stuart G. Higgins, Beinn V. O. Muir, Martin Heeney, Alasdair J. Campbell

MRS Commun. 5 (2015) 599-603, doi: 10.1557/mrc.2015.66
Supporting data: doi: 10.5281/zenodo.30366

Image © 2015 Higgins  et al.  CC-BY

Image © 2015 Higgins et al. CC-BY

'We demonstrate the gravure printing of a high-performance indacenodithiophene (IDT) copolymer, indacenodithiophene–benzothiadiazole (C16IDT–BT), onto self-aligned organic field-effect transistor architectures on flexible plastic substrates. We observed that the combination of a gravure-printed dielectric with gravure-printed semiconductor yielded devices with higher mean-effective mobility than devices manufactured using photolithographically patterned dielectric. Peak mobilities of μ = 0.1 cm2 V−1 s−1 were measured, and exceed previous reports for non-printed C16IDT-BT on non-flexible silicon substrates.'


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